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GL05T to GL24T
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ABSOLUTE MAXIMUM RATINGS GL05T
Vishay Semiconductors
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Peak pulse power
8/20 μs
8/20 μs waveform
Pin 1-2 (pin 3 n.c.)
I PPM
P PP
25
300
A
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
V ESD
±8
± 15
kV
kV
Blocking voltage
I B = 1 μA
Pin 2-1 or pin 2-3
V B
70
V
Operating temperature
Storage temperature
Junction temperature
T J
T STG
- 55 to + 150
- 55 to + 150
°C
°C
ABSOLUTE MAXIMUM RATINGS GL12T
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Peak pulse power
8/20 μs
8/20 μs waveform
Pin 1-2 (pin 3 n.c.)
I PPM
P PP
12
300
A
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
V ESD
±8
± 15
kV
kV
Blocking voltage
I B = 1 μA
Pin 2-1 or pin 2-3
V B
70
V
Operating temperature
Storage temperature
Junction temperature
T J
T STG
- 55 to + 150
- 55 to + 150
°C
°C
ABSOLUTE MAXIMUM RATINGS GL15T
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Peak pulse power
8/20 μs
8/20 μs waveform
Pin 1-2 (pin 3 n.c.)
I PPM
P PP
10
300
A
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
V ESD
±8
± 15
kV
kV
Blocking voltage
Operating temperature
Storage temperature
I B = 1 μA
Junction temperature
Pin 2-1 or pin 2-3
V B
T J
T STG
70
- 55 to + 150
- 55 to + 150
V
°C
°C
ABSOLUTE MAXIMUM RATINGS GL24T
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Peak pulse power
8/20 μs
8/20 μs waveform
Pin 1-2 (pin 3 n.c.)
I PPM
P PP
5
300
A
W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
V ESD
±8
± 15
kV
kV
Blocking voltage
Operating temperature
Storage temperature
I B = 1 μA
Junction temperature
Pin 2-1 or pin 2-3
V B
T J
T STG
70
- 55 to + 150
- 55 to + 150
V
°C
°C
The GLxxT contains an avalanche diode (pin 3-1) and a switching diode (pin 3-2). With pin 1 connected to the signal or data line
and pin 2 connected to ground both diodes are in series (pin 3 remains unconnected). The big and robust avalanche diode,
driven in reverse direction, provides the working range V RWM of 5 V, 12 V, 15 V or 24 V. Due to its size the capacitance of the
avalanche diode is in the range of typ. 260 pF (GL05T) and 65 pF (GL24T). The small switching diode in series has a low
capacitance of just 2.5 pF (typ.). As both diodes are in series (with pin 3 not connected) the total capacitance of both diodes
measured between pin 1 and 2 is as low as the capacitance of the switching diode.
Before the GLxxT can provide this low capacitance the big capacitance of the avalanche diode has to be charged up with the
first signal or data pulses. This is usually no problem for digital signals like USB or other data ports.
With the GLxxT a signal or data line can be protected against positive transients only. For negative transients another GLxxT
can be used to provide a back path for the negative transients as well.
Rev. 1.9, 26-Feb-13
2
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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